194 characteristic curves i c -v ce characteristics (typical) h fe -i c characteristics (typical) h fe -i c temperature characteristics (typical) v ce (sat)-i c temperature characteristics (typical) v ce (sat)-i b characteristics (typical) i c -v be temperature characteristics (typical) j-a -pw characteristics p t -t a characteristics safe operating area (soa) sdc03 (t a =25 c) symbol ratings unit v cbo 60 10 v v ceo 60 10 v v ebo 6v i c 1.5 a i cp 2.5 (pw 1ms, d u 10%) a i b 0.1 a p t 3 (t a =25 c) w t j 150 c t stg C 40 to +150 c j C a 41.6 c/w (t a =25 c) symbol unit conditions i cbo 10 av cb =50v i ebo 1.1 3.5 ma v eb =6v v ceo 50 60 70 v i c =10ma h fe 2000 5000 12000 v ce =4v, i c =1a v ce (sat) 1.2 1.4 v v be (sat) 1.8 2.2 v v fec 1.3 1.8 v i fec =1a t on 0.5 sv cc 30v, t stg 4.0 si c =1a, t f 1.0 si b1 = C i b2 =2ma f t 50 mhz v ce =12v, i e = C 0.1a c ob 25 pf v cb =10v, f=1mhz i c =1a, i b =2ma specification min typ max 2.5 2.0 1.5 1.0 0.5 0 012345 6 i c (a) v ce (v) i b =10ma 2ma 1m a 0.6ma 0.4m a 0.3ma (v ce =4v) 10000 5000 1000 500 100 50 0.03 0.05 0.1 0.5 1 2.5 h fe i c (a) typ 10000 5000 1000 500 100 50 0.03 0.05 0.1 0.5 1 2.5 h fe i c (a) (v ce =4v) t a =125 c 75 c 25 c C 30 c (i c / i b =1000) 3 2 1 0 0.2 0.5 1 2.5 v ce (sat) (v) i c (a) ta=125 c 75 c 25 c C 30 c 3 2 1 0 0.1 0.5 1 5 10 50 100 i b (ma) v ce (sat) (a) i c =2a 1a 0.5a 2.5 2.0 1.5 1.0 0.5 0 0123 i c (a) v be (v) (v ce =4v) t a = 1 2 5 c 7 5 c 25 c C 30 c 50 10 5 1 1000 500 100 50 10 5 1 j C a ( c / w) pw (ms) 3 2 1 0 0 4 3 2 1 50 100 150 1-1 chip operation 2-2 chip operation 3-3 chip operation 4-4 chip operation p t (w) ta ( c) 5 1 0.5 0.1 0.05 3 5 10 50 100 v ce ( v ) i c (a) 100 s 1 m s 10m s single pulse without heatsink t a =25 c 2 r 1 r 2 15,16 1 4 13,14 3 6 11,12 5 8 9,10 7 npn darlington with built-in avalanche diode r 1 : 3.5k ? typ r 2 : 200 ? typ external dimensions e sd absolute maximum ratings equivalent circuit diagram electrical characteristics
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